IRF6727MTR1PBF International Rectifier, IRF6727MTR1PBF Datasheet - Page 3

MOSFET N-CH 30V 32A DIRECTFET

IRF6727MTR1PBF

Manufacturer Part Number
IRF6727MTR1PBF
Description
MOSFET N-CH 30V 32A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6727MTR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Input Capacitance (ciss) @ Vds
6190pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.4 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
180 A
Power Dissipation
89 W
Gate Charge Qg
49 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6727MTR1PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6727MTR1PBF
Manufacturer:
YDS
Quantity:
192
ˆ
Notes:
P
P
P
T
T
T
R
R
R
R
R
ƒ Surface mounted on 1 in. square Cu
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
(still air).
@T
@T
@T
A
A
C
= 25°C
= 70°C
= 25°C
0.001
0.01
100
0.1
10
1E-006
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
fl
f
jl
kl
l
Parameter
Parameter
Ã
0.001
t 1 , Rectangular Pulse Duration (sec)
small clip heatsink (still air)
τ
J
0.01
τ
J
τ
1
Ci= τi/Ri
τ
Š
1
Ci= τi/Ri
R
R
θ
1
R
is measured at
1
0.1
τ
2
τ
R
2
2
R
2
with
R
τ
3
3
R
τ
3
T
3
1
J
Typ.
12.5
of approximately 90°C.
–––
–––
1.0
20
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
4
τ
4
R
4
4
-40 to + 150
τ
A
τ
A
footprint full size board with
metalized back and with small
clip heatsink (still air)
Max.
0.022
10
‰ Mounted on minimum
270
Ri (°C/W)
IRF6727MPbF
2.8
1.8
89
1.1959
3.1186
22.998
17.704
ƒ
Max.
–––
–––
–––
1.4
45
100
0.000163
0.009223
0.9465
41.2
τi (sec)
1000
Units
Units
°C/W
W/°C
°C
W
3

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