IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 2
![MOSFET P-CH 55V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF5305PBF
Manufacturer Part Number
IRF5305PBF
Description
MOSFET P-CH 55V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF5305PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
-31 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 31 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF5305PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5305PBF
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
IRF5305PBF
Manufacturer:
IR
Quantity:
20 000