IRLI540NPBF International Rectifier, IRLI540NPBF Datasheet - Page 4

• Manufacturer Part Number: IRLI540NPBF
• Description: MOSFET N-CH 100V 23A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLI540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 63 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 42 W
• Mounting Style: Through Hole
• Gate Charge Qg: 49.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLI540NPBF

1000
3000
2000
1000
100
10
1
0
0.4
1
0.6
V
V
T = 175°C
SD
DS
J
C
C
C
, Source-to-Drain Voltage (V)
V
C
C
C
iss
oss
rss
, Drain-to-Source Voltage (V)
0.8
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
J
1.0
gs
ds
gd
+ C
+ C
10
f = 1MHz
gd
gd
1.2
, C
ds
1.4
SHORTED
V
GS
1.6
= 0V
1.8
100
A
A
1000
100
15
12
10
9
6
3
0
1
0
1
I
Single Pulse
T
T
D
C
J
= 18A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
V
20
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
10
40
BY R
V
V
V
DS
DS
DS
DS(on)
= 20V
= 80V
= 50V
FOR TEST CIRCUIT
60
SEE FIGURE 13
100
100µs
10µs
1ms
10ms
80
1000
100
A
A