IRF7821 International Rectifier, IRF7821 Datasheet - Page 5
![MOSFET N-CH 30V 13.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7821
Manufacturer Part Number
IRF7821
Description
MOSFET N-CH 30V 13.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7821.pdf
(10 pages)
Specifications of IRF7821
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.1 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1010pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7821
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7821
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7821GTRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7821PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7821TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7821TRPBF
Manufacturer:
International Rectifier
Quantity:
94 663
Company:
Part Number:
IRF7821TRPBF
Manufacturer:
IR
Quantity:
40
Part Number:
IRF7821TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7821UTRPBF
Manufacturer:
SKYWORKS
Quantity:
114
www.irf.com
0.01
100
0.1
10
14
12
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
6
4
2
0
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
t 1 , Rectangular Pulse Duration (sec)
125
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
2.6
2.2
1.8
1.4
1.0
-75
-50
0.1
-25
T J , Temperature ( °C )
0
1
25
50
75
I D = 250µA
10
100
125
5
150
100