IRF7811W International Rectifier, IRF7811W Datasheet - Page 3

• Manufacturer Part Number: IRF7811W
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7811W

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 5V
• Input Capacitance (ciss) @ Vds: 2335pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7811W; Q1057779

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0.020
0.015
0.010
0.005
Fig 3. On-Resistance Vs. Gate Voltage
2.0
1.5
1.0
0.5
0.0
Fig 1. Normalized On-Resistance
-60 -40 -20
3.5
I =
D
15A
4.0
V GS, Gate -to -Source Voltage (V)
T , Junction Temperature ( C)
Vs. Temperature
J
0
4.5
20 40 60 80 100 120 140 160
5.0
I D = 15A
5.5
6.0
V
°
GS
6.5
=
4.5V
7.0
4000
3000
2000
1000
6.0
4.0
2.0
0.0
0
1
0
I D = 15A
V DS = 16V
Fig 2. Typical Gate Charge Vs.
Fig 4. Typical Capacitance Vs.
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
Drain-to-Source Voltage
4
Q G, Total Gate Charge (nC)
Coss
Crss
Ciss
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
8
IRF7811W
10
12
f = 1 MHZ
16
SHORTED
20
3
100
24