IRF7458 International Rectifier, IRF7458 Datasheet - Page 4

• Manufacturer Part Number: IRF7458
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7458

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 16V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7458

IRF7458
100000
10000
4
1000
100
1000
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
0.6
Forward Voltage
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.0
= C gs + C gd , C ds
Coss
Ciss
Crss
10
°
1.4
f = 1 MHZ
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
100
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
10
V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
V
DS
DS
www.irf.com
40
10
= 24V
= 15V
50
10us
100us
1ms
10ms
100
60