IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet

MOSFET N-CH 100V 59A TO-220AB

IRFB59N10DPBF

Manufacturer Part Number
IRFB59N10DPBF
Description
MOSFET N-CH 100V 59A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB59N10DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 35.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
2450pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
59 A
Gate Charge, Total
76 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
18 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
59 A
Mounting Style
Through Hole
Gate Charge Qg
76 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB59N10DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB59N10DPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB59N10DPBF
Quantity:
9 000

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IRFB59N10DPBF Summary of contents

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IRFB/IRFS/IRFSL59N10DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & ...

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