IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet - Page 2
![MOSFET N-CH 200V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB31N20DPBF
Manufacturer Part Number
IRFB31N20DPBF
Description
MOSFET N-CH 200V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB31N20DPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
31 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
0.75 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
31 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB31N20DPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB31N20DPBF
Manufacturer:
IR
Quantity:
20 000