IRF1324LPBF International Rectifier, IRF1324LPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1324LPBF
• Description: MOSFET N-CH 24V 195A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1324LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7590pF @ 24V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 340 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 160 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
10000
1000
1000
1000
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 175°C
C oss
C rss
C iss
V DS , Drain-to-Source Voltage (V)
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
1
4.0V
5
T J = 25°C
f = 1 MHZ
10
V DS = 15V
≤60µs PULSE WIDTH
6
10
TOP
BOTTOM
7
8
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
100
100
9
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
10000
Fig 4. Normalized On-Resistance vs. Temperature
1000
14.0
12.0
10.0
100
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
I D = 195A
I D = 195A
V GS = 10V
≤ 60µs PULSE WIDTH
Tj = 175°C
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
50
1
4.0V
V DS = 19V
V DS = 12V
100
10
TOP
BOTTOM
150
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
100
200
3