IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet

MOSFET N-CH 200V 43A TO-220AB

IRFB38N20DPBF

Manufacturer Part Number
IRFB38N20DPBF
Description
MOSFET N-CH 200V 43A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB38N20DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
54 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
91nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
43 A
Gate Charge, Total
60 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
0.054 Ohm
Resistance, Thermal, Junction To Case
0.47 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Mounting Style
Through Hole
Gate Charge Qg
60 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB38N20DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFB38N20DPBF
Manufacturer:
IR
Quantity:
12 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFB38N20DPBF
Manufacturer:
International Rectifier
Quantity:
1 787
Price:
Notes  through ‡
l
l
l
l
* R
www.irf.com
Applications
l
l
Absolute Maximum Ratings
Thermal Resistance
Benefits
I
I
I
P
P
V
dv/dt
T
T
R
R
R
R
D
D
DM
J
STG
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
D
D
GS
@ T
@ T
and Current
JC
CS
JA
JA
Low Gate-to-Drain Charge to
Reduce Switching Losses
Fully Characterized Capacitance
Including Effective C
Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage
Lead-Free
@T
@T
JC
High frequency DC-DC converters
Plasma Display Panel
(end of life) for D
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation ‡
Linear Derating Factor ‡
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
are on page 11
2
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
OSS
Parameter
Parameter
to Simplify
GS
GS
@ 10V ‡
@ 10V ‡
V
V
R
T
DS
DS (Avalanche)
J
DS(ON)
max
IRFB38N20DPbF
max @ 10V
TO-220AB
min.
Key Parameters
300 (1.6mm from case )
Typ.
0.50
–––
–––
–––
HEXFET Power MOSFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS38N20DPbF
Max.
300*
180
± 30
2.0*
3.8
9.5
43*
30*
IRFSL38N20DPbF
IRFB38N20DPbF
IRFS38N20DPbF
D
2
Pak
200
260
175
54
Max.
0.47*
–––
62
40
IRFSL38N20DPbF
PD - 97001C
TO-262
m
Units
09/22/10
Units
W/°C
°C
°C/W
V/ns
V
V
°C
W
A
V
1

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IRFB38N20DPBF Summary of contents

Page 1

... Notes  through ‡ are on page 11 www.irf.com Key Parameters min. DS (Avalanche) R max @ 10V DS(ON) T max J to Simplify TO-220AB IRFB38N20DPbF @ 10V ‡ 10V ‡ 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET 200 V 260 175 ° Pak TO-262 IRFS38N20DPbF IRFSL38N20DPbF Max. Units 43* 30* A 180 3 ...

Page 2

IRFB/S/SL38N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 100 6.0V 5.5V BOTTOM 5. 300µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10. ...

Page 4

IRFB/S/SL38N20DPbF 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL ...

Page 6

IRFB/S/SL38N20DPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + ƒ - „ P.W. Period D = ...

Page 8

IRFB/S/SL38N20DPbF E XAMPLE : T HIS IS AN IRF 1010 LOT CODE 1789 19, 1997 LINE "C" Note: "P" inas s embly line pos ...

Page 9

T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

IRFB/S/SL38N20DPbF TO-262 Package Outline TO-262 Part Marking Information E XAMPLE : THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an Automotive Qualified version of ...

Page 11

TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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