IRFS4010PBF International Rectifier, IRFS4010PBF Datasheet

MOSFET N-CH 100V 180A D2PAK

IRFS4010PBF

Manufacturer Part Number
IRFS4010PBF
Description
MOSFET N-CH 100V 180A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFS4010PBF.pdf (10 pages)

Specifications of IRFS4010PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.7 mOhm @ 106A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
215nC @ 10V
Input Capacitance (ciss) @ Vds
9575pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
180 A
Power Dissipation
375 W
Mounting Style
SMD/SMT
Gate Charge Qg
143 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFS4010PBF
Manufacturer:
IR
Quantity:
20
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFS4010PBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
E
I
E
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Parameter
Parameter
jk
e
GS
GS
f
@ 10V
@ 10V
d
ij
G
Gate
G
D
IRFS4010PbF
IRFSL4010PbF
D
S
D
2
Pak
IRFS4010PbF
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
G
V
R
I
D
DSS
DS(on)
10lb
S
-55 to + 175
x
in (1.1N
Max.
HEXFET Power MOSFET
180
127
720
375
± 20
300
318
Drain
2.5
31
D
typ.
max.
x
m)
IRFSL4010PbF
D
Max.
0.40
40
TO-262
3.9m
4.7m
180A
G
100V
D
Source
S
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
96186
W
A
V
A
10/06/08
1

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IRFS4010PBF Summary of contents

Page 1

... IRFS4010PbF IRFSL4010PbF HEXFET Power MOSFET D V DSS R typ. 3.9m DS(on) max. 4. Pak TO-262 IRFS4010PbF IRFSL4010PbF G D Drain Max. 180 127 720 375 2.5 ± - 175 300 x x 10lb in (1.1N m) 318 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 5.0V 4.5V 4.3V BOTTOM 4. ≤ 60µs PULSE WIDTH Tj = 25°C 4.0V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

175°C 100 25°C 10 1.0 0.2 0.6 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 180 160 140 120 100 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 ...

Page 6

250µA 2 1.0mA 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 16. ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 8

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 8 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ 5 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` ...

Page 9

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ www.irf.com DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD ...

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