CAT5116VI-T3 ON Semiconductor, CAT5116VI-T3 Datasheet - Page 3

• Manufacturer Part Number: CAT5116VI-T3
• Description: Digital Potentiometer ICs DPP NV 100 taps Log Up/Down
• Manufacturer: ON Semiconductor

Specifications of CAT5116VI-T3

• Number Of Pots: Single
• Taps Per Pot: 100
• Resistance: 32 KOhms
• Wiper Memory: Non Volatile
• Digital Interface: Serial (3-Wire)
• Operating Supply Voltage: 3.3 V, 5 V
• Supply Current: 100 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Package / Case: SOIC-8
• Number Of Elements: 1
• # Of Taps: 100
• Resistance (max): 32KOhm
• Power Supply Requirement: Single
• Interface Type: Serial (3-Wire)
• Single Supply Voltage (typ): 3.3/5V
• Dual Supply Voltage (typ): Not RequiredV
• Single Supply Voltage (min): 2.5V
• Single Supply Voltage (max): 5.5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
Table 1. OPERATION MODES
Table 2. ABSOLUTE MAXIMUM RATINGS
Table 3. RELIABILITY CHARACTERISTICS
Supply Voltage
Inputs
Operating Ambient Temperature
Junction Temperature (10 s)
Storage Temperature
Lead Soldering (10 s max)
I
High to Low
High to Low
LTH
V
ZAP
V
CS to GND
INC to GND
U/D to GND
R
R
R
Industrial (‘I’ suffix)
High
Low
INC
Symbol
CC
(Notes 1, 2)
H
L
W
X
N
T
to GND
to GND
to GND
(Note 1)
END
DR
to GND
Figure 4. Potentiometer Equivalent Circuit
C
Low to High
Low to High
C
H
L
ESD Susceptibility
Latch−Up
Data Retention
Endurance
High
Low
Low
CS
Parameter
Parameters
R
R
H
L
High
U/D
Low
X
X
X
R
WI
MIL−STD−883, Test Method 3015
JEDEC Standard 17
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 1003
No Store, Return to Standby
C
W
Store Wiper Position
http://onsemi.com
Wiper toward H
Wiper toward L
R
Test Method
W
Operation
Standby
3
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−40 to +85
1,000,000
−0.5 to +7
Ratings
2000
+150
+150
+300
Min
100
100
CC
CC
CC
CC
CC
CC
CC
+0.5
+0.5
+0.5
+0.5
+0.5
+0.5
+ 1 V.
Typ
Max
Units
°C
°C
°C
°C
V
V
V
V
V
V
V
Stores
Units
Years
mA
V