NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet - Page 4

• Manufacturer Part Number: NTA4151PT1G
• Description: MOSFET P-CH 20V 760MA SOT-416
• Manufacturer: ON Semiconductor

Specifications of NTA4151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 156pF @ 5V
• Power - Max: 301mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.36 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.76 A
• Power Dissipation: 301 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: -760 mA
• Gate Charge, Total: 2.1 nC
• Package Type: SC-75/SOT-416
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.26 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 29 ns
• Time, Turn-on Delay: 8 ns
• Transconductance, Forward: 0.5 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Forward, Diode: -0.72 V
• Voltage, Gate To Source: ±6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTA4151PT1GOSTR

M
K
1
2 PL
G
−X−
A
3
0.08 (0.003)
2
B
C
D
M
−Y−
3 PL
X
Y
J
S
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
N
NTA4151P, NTE4151P
SOLDERING FOOTPRINT*
SC−89, 3 LEAD
CASE 463C−03
−T−
H
ISSUE C
SEATING
PLANE
6
H
G
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
H
K
M
N
J
L
S
MIN
1.50
0.75
0.60
0.23
0.10
0.30
1.50
−−−
−−−
MILLIMETERS
0.50 BSC
0.53 REF
1.10 REF
NOM
1.60
0.85
0.70
0.28
0.15
0.40
1.60
−−−
−−−
MAX
1.70
0.95
0.80
0.33
0.20
0.50
1.70
10
10
_
_
0.059
0.030
0.024
0.009
0.004
0.012
0.059
MIN
−−−
−−−
0.020 BSC
0.021 REF
0.043 REF
INCHES
0.063
0.034
0.028
0.011
0.006
0.016
0.063
NOM
−−−
−−−
NTA4151P/D
0.067
0.040
0.031
0.013
0.008
0.020
0.067
MAX
10
10
_
_