NTE4153NT1G ON Semiconductor, NTE4153NT1G Datasheet - Page 2
![MOSFET N-CH 20V 915MA SC-89](/photos/5/32/53228/sc-89-3_463c_sml.jpg)
NTE4153NT1G
Manufacturer Part Number
NTE4153NT1G
Description
MOSFET N-CH 20V 915MA SC-89
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheet
1.NTE4153NT1G.pdf
(6 pages)
Specifications of NTE4153NT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
915mA
Vgs(th) (max) @ Id
1.1V @ 250µA
Gate Charge (qg) @ Vgs
1.82nC @ 4.5V
Input Capacitance (ciss) @ Vds
110pF @ 16V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.915 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.23Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±6V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTE4153NT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
93 000
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
3 480
Part Number:
NTE4153NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
NTA4153NT1
NTA4153NT1G
NTE4153NT1G
Parameter
Device
(Note 2)
(T
V
V
J
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
= 25°C unless otherwise stated)
(BR)DSS
C
C
t
d(OFF)
GS(TH)
Marking
I
I
C
G(TOT)
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
OSS
RSS
FS
ISS
t
t
SD
GS
GD
(XX)
r
f
TR
TR
TP
/T
/T
NTA4153N, NTE4153N
J
J
http://onsemi.com
I
V
V
V
V
V
V
S
V
V
V
V
V
V
GS
V
GS
GS
GS
GS
GS
= 200 mA
DS
I
DS
GS
GS
GS
D
GS
GS
= 0.2 A, R
= 4.5 V, V
= 0 V,
Test Condition
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 4.5 V, V
SC−75 / SOT−416
SC−75 / SOT−416
= 10 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
= 1.5 V, I
= V
= 0 V, I
= 0 V, V
V
I
D
2
DS
DS
(Pb−Free)
(Pb−Free)
Package
= 0.2 A
SC−89
, I
= 16 V
D
GS
D
D
D
D
D
DS
D
DS
DD
G
= 250 mA
= 400 mA
= 250 mA
= 600 mA
= 500 mA
= 350 mA
= ±4.5 V
= 40 mA
= 10 W
T
= 16 V
T
= 10 V,
= 10 V,
J
J
= 125°C
= 25°C
0.45
Min
20
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
−2.15
Shipping
18.4
0.76
1.82
0.42
0.67
0.54
Typ
127
170
242
500
110
1.4
0.2
0.3
3.7
4.4
7.6
26
16
12
25
†
9500
Max
±1.0
100
230
275
700
1.1
1.1
mV/°C
mV/°C
Unit
mW
nA
mA
nC
pF
ns
V
V
S
V