BS170G ON Semiconductor, BS170G Datasheet - Page 2

• Manufacturer Part Number: BS170G
• Description: MOSFET N-CH 60V 500MA TO-92
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of BS170G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.5 A
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Resistance, Drain To Source On: 1.8 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Transconductance, Forward: 200 Millimhos
• Voltage, Breakdown, Drain To Source: 90 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BS170G; BS170GOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BS170
BS170G
BS170RLRA
BS170RLRAG
BS170RLRM
BS170RLRMG
BS170RLRP
BS170RLRPG
BS170RL1
BS170RL1G
BS170ZL1
BS170ZL1G
Specifications Brochure, BRD8011/D.
Gate Reverse Current
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Static Drain−Source On Resistance
Drain Cutoff Current
Forward Transconductance
Input Capacitance
Turn−On Time
Turn−Off Time
(V
(V
(V
(V
(V
(V
(V
(I
(I
D
D
GS
GS
DS
GS
DS
DS
DS
= 0.2 Adc) See Figure 1
= 0.2 Adc) See Figure 1
= 15 Vdc, V
= 0, I
= V
= 10 Vdc, I
= 25 Vdc, V
= 10 Vdc, I
= 10 Vdc, V
GS
D
, I
= 100 mAdc)
D
= 1.0 mAdc)
D
D
Device
GS
GS
DS
= 200 mAdc)
= 250 mAdc)
= 0)
= 0 Vdc)
= 0, f = 1.0 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
BS170
2
V
Symbol
V
r
(BR)DSS
I
DS(on)
I
GS(Th)
D(off)
C
GSS
g
t
t
on
off
iss
fs
Min
0.8
60
−
−
−
−
−
−
−
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
1000 Unit/Tube
1000 Unit/Tube
Shipping
0.01
Typ
200
2.0
1.8
4.0
4.0
90
−
−
†
Max
3.0
5.0
0.5
10
60
10
10
−
−
mmhos
nAdc
Unit
Vdc
Vdc
mA
pF
ns
ns
W