DMG1012T-7 Diodes Inc, DMG1012T-7 Datasheet - Page 3

• Manufacturer Part Number: DMG1012T-7
• Description: IC MOSFET N-CHAN SOT-523
• Manufacturer: Diodes Inc

Specifications of DMG1012T-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 630mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60.67pF @ 16V
• Power - Max: 280mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.63 A
• Power Dissipation: 0.28 W
• Maximum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG1012T-7; DMG1012T-7DITR; Q4768583

DMG1012T
Document number: DS31783 Rev. 3 - 2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1.6
1.2
0.8
0.4
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0
-50
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
-25
-25
T , AMBIENT TEMPERATURE (°C)
I = 250µA
D
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
T , JUNCTION TEMPERATURE (°C)
A
D
0.3
J
Fig. 3 Typical On-Resistance
0
0
25
V
25
0.6
V
V
GS
GS
GS
I = 500mA
V
= 1.8V
D
= 2.5V
= 4.5V
GS
50
50
= 2.5V
0.9
75
75
V
I = 1.0A
GS
D
100
100
= 4.5V
1.2
125 150
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1.5
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0.8
0.6
0.4
0.2
10
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0
-50
0.2
0
Fig. 6 On-Resistance Variation with Temperature
-25
Fig. 8 Diode Forward Voltage vs. Current
Fig. 4 Typical Drain-Source On-Resistance
V , SOURCE-DRAIN VOLTAGE (V)
V
T , JUNCTION TEMPERATURE (°C)
0.4
SD
GS
J
0.3
vs. Drain Current and Temperature
= 4.5V
V
I = 500mA
D
0
GS
I , DRAIN CURRENT (A)
D
= 2.5V
V
25
0.6
0.6
I = 1.0A
GS
D
= 4.5V
T = 25°C
A
50
0.8
0.9
75
T = 150°C
T = 125°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
A
100
1.0
DMG1012T
1.2
© Diodes Incorporated
125 150
October 2009
1.2
1.5