DMN601K-7 Diodes Inc, DMN601K-7 Datasheet
DMN601K-7
Manufacturer Part Number
DMN601K-7
Description
MOSFET N-CH 60V 300MA SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.DMN601K-7.pdf
(4 pages)
Specifications of DMN601K-7
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
800mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN601K-7-F
DMN601K-FDITR
DMN601K-FDITR
DMN601K-FTR
DMN601K-FTR
DMN601K-FDITR
DMN601K-FDITR
DMN601K-FTR
DMN601K-FTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN601K-7
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
DMN601K-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN601K-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
Notes:
DMN601K
Document number: DS30652 Rev. 4 - 2
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 4 and 6)
ESD Protected Up To 2kV
1. Device mounted on FR-4 PCB.
2. No purposefully added lead. Halogen and Antimony Free.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
ESD protected up to 2kV
Characteristic
DS(ON)
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
TOP VIEW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
Symbol
R
SOT-23
BV
V
DS (ON)
I
I
C
1 of 4
|Y
C
C
GS(th)
GSS
DSS
oss
rss
DSS
iss
fs
Pulsed (Note 3)
|
Mechanical Data
•
•
•
•
•
•
•
•
Continuous
Min
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1.0
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Typ
1.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
O
3
Fire Retardants.
Drain
Max
Symbol
Symbol
±10
T
1.0
2.5
2.0
3.0
5.0
⎯
⎯
50
25
Source
V
V
j,
R
P
GSS
T
DSS
I
θ JA
D
d
STG
Unit
ms
μA
μA
pF
pF
pF
Ω
V
V
V
V
V
V
V
V
V
V
GS
DS
GS =
DS
GS =
GS
DS
DS
Pin Out Configuration
G
-65 to +150
= 60V, V
= 10V, I
= 10V, I
= 5V, I
= 25V, V
= 0V
±20V, V
10V, I
Value
Value
TOP VIEW
±20
300
800
350
357
60
,
I
Test Condition
D
D
D
D
D
D
= 10μA
GS
= 0.05A
GS
DS
= 0.5A
= 0.2A
= 1mA
= 0V
= 0V, f = 1.0MHz
= 0V
S
DMN601K
© Diodes Incorporated
Units
Units
°C/W
mW
mA
°C
V
V
June 2008
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DMN601K-7 Summary of contents
Page 1
... BV DSS ⎯ I DSS ⎯ I GSS V 1.0 GS(th) ⎯ (ON) ⎯ ⎯ C iss ⎯ C oss ⎯ C rss www.diodes.com DMN601K Drain Source TOP VIEW Pin Out Configuration Symbol Value V 60 DSS ±20 V GSS 300 I D 800 Symbol Value P 350 d 357 R θ JA -65 to +150 T T ...
Page 2
... Document number: DS30652 Rev 0.1 100 125 150 Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 0 1 Fig. 6 Static Drain-Source On-Resistance www.diodes.com DMN601K V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( GATE SOURCE VOLTAGE (V) GS, vs. Gate-Source Voltage June 2008 © Diodes Incorporated ...
Page 3
... Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature Ordering Information (Note 7) Part Number DMN601K-7 Notes: 7. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2005 2006 Code S Month Jan Feb Code 1 2 DMN601K Document number: DS30652 Rev ° ...
Page 4
... Dim α All Dimensions in mm Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN601K SOT-23 Min Max 0.37 0.51 1.20 1.40 2.30 2.50 0.89 1.03 0.45 0.60 1.78 2.05 2.80 3.00 0.013 0.10 0.903 1.10 0.45 0.61 0.085 0.180 0° 8° ...