ZXMN10B08E6TA Diodes Zetex, ZXMN10B08E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN10B08E6TA
• Description: MOSFET N-CH 100V 1.9A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN10B08E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10B08E6TR

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10B08E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
(at T
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
V SD
t rr
Q rr
A
= 25°C unless otherwise stated).
4
MIN.
100
1.0
TYP.
12.1
0.85
32.0
40.0
497
4.8
2.9
2.1
5.0
5.0
9.2
1.7
2.5
29
18
MAX. UNIT CONDITIONS.
0.230
0.300
0.500
0.95
100
0.5
3.0
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - OCTOBER 2005
I D =250 A, V GS =0V
V DS =100V, V GS =0V
V GS = 20V, V DS =0V
I
V GS =10V, I D =1.6A
V GS =4.5V, I D =1.4A
V GS =4.3V, I D =1.1A
V DS =15V,I D =1.6A
V DS =50 V, V GS =0V,
f=1MHz
V DD =50V, I D =1.0A
R G ≅6.0 , V GS =10V
V DS =50V,V GS =5V,
I
V DS =50V,V GS =10V,
I
T J =25°C, I S =2.0A,
V GS =0V
T J =25°C, I F =1.7A,
di/dt= 100A/ s
D
D
D
=1.6A
=1.6A
=250 A, V DS = V GS