IRF7457TRPBF International Rectifier, IRF7457TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7457TRPBF
• Description: MOSFET N-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7457TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7457PBFTR; IRF7457TRPBF; IRF7457TRPBFTR

IRF7457PbF
I
AS
12V
Fig 14a&b. Unclamped Inductive Test circuit
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
6
Same Type as D.U.T.
0.030
0.025
0.020
0.015
0.010
0.005
0.000
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
(BR)DSS
D.U.T.
20
I
D
and Waveforms
and Waveform
+
-
I D , Drain Current ( A )
V
DS
40
V
GS
R G
20V
V DS
VGS = 4.5V
60
V
t p
G
VGS = 10V
Q
I AS
GS
D.U.T
0.01 Ω
L
80
Q
Charge
Q
GD
G
100
15V
DRIVER
+
120
-
V DD
A
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
Fig 14. On-Resistance Vs. Gate Voltage
Fig 14c. Maximum Avalanche Energy
3.0
700
600
500
400
300
200
100
0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
3.5
Vs. Drain Current
50
J
4.0
75
I D = 15A
4.5
100
www.irf.com
TOP
BOTTOM
5.0
125
°
I D
5.4A
9.6A
12A
5.5
150