MTB30P06VT4G ON Semiconductor, MTB30P06VT4G Datasheet - Page 5

• Manufacturer Part Number: MTB30P06VT4G
• Description: MOSFET P-CH 60V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB30P06VT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 30 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTB30P06VT4GOS; MTB30P06VT4GOS; MTB30P06VT4GOSTR

maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define the
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
10
9
8
7
6
5
4
3
2
1
0
) nor rated voltage (V
Figure 8. Gate−To−Source and Drain−To−Source
0
Q1
J(MAX)
Q3
10
Voltage versus Total Charge
r
,t
− T
f
) do not exceed 10 ms. In addition the total
Q
g
C
, TOTAL GATE CHARGE (nC)
)/(R
20
Q2
qJC
QT
).
DSS
30
V
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
DS
30
25
20
15
10
5
0
Figure 10. Diode Forward Voltage versus Current
0
40
C
) of 25°C. Peak
0.2
T
V
J
GS
= 25°C
= 0 V
SAFE OPERATING AREA
V
T
I
0.4
D
50
J
SD
= 30 A
= 25°C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
http://onsemi.com
0.6
V
MTB30P06V
GS
60
0.8
30
27
24
21
18
15
12
9
6
3
0
5
1
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1.2
1000
Although many E−FETs can withstand the stress of
100
10
1
1
1.4
T
I
V
V
D
J
DD
GS
= 30 A
= 25°C
DM
1.6
= 30 V
= 10 V
Figure 9. Resistive Switching Time
), the energy rating is specified at rated
Variation versus Gate Resistance
1.8
t
d(off)
t
d(on)
R
G
t
2
t
f
r
, GATE RESISTANCE (OHMS)
D
), in accordance with industry
2.2
10
D
can safely be
100