IRF630NSTRLPBF International Rectifier, IRF630NSTRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF630NSTRLPBF
• Description: MOSFET N-CH 200V 9.3A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF630NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 82W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 82 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF630NSTRLPBF; IRF630NSTRLPBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
Power MOSFETs
D =
-
„
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRF630N/S/LPbF
7