DI9435T Diodes Zetex, DI9435T Datasheet - Page 2

• Manufacturer Part Number: DI9435T
• Description: MOSFET P-CH 30V 5.3A 8-SOP
• Manufacturer: Diodes Zetex

Specifications of DI9435T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics (continued)
DS11503 Rev. F-4
Notes:
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Characteristic
2. Pulse Test: Pulse width l 300µs, duty cycle = l 2.0%.
T
T
j
j
T
= 125°C
= 125°C
j
= 70°C
Symbol
R
BV
V
t
I
I
t
I
C
C
D(OFF)
DS (ON)
C
I
GSSF
GSSR
D(ON)
D(ON)
Q
V
GS(th)
g
Q
DSS
Q
OSS
RSS
I
t
ISS
t
t
FS
SD
DSS
S
rr
gs
gd
r
f
g
Min
-1.0
-0.7
-5.0
-30
-20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25°C unless otherwise specified
2 of 4
0.038
0.054
0.046
0.064
-0.85
Typ
-1.4
-1.0
950
610
220
3.0
9.0
—
—
—
—
—
10
10
18
80
45
29
—
—
Max
-100
0.05
0.10
0.07
0.09
-1.0
-5.0
100
120
100
-1.9
-1.3
100
30
60
40
—
—
—
—
—
—
—
—
—
Unit
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
W
A
m
A
V
V
VDS = -24V. V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
V
(Note 2)
V
dl
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
GS
GS
GS
F
/dt = 100A/µs
= -15V. V
= -15V, I
= 0V, I
= 20V, V
= -20V, V
= V
= -10V, I
= -10V, I
= -6.0V, I
= -4.5V, I
= -10V, V
= -4.5V, V
= -15V, V
= -15V, I
= -15V. I
= -10V
= 0V, I
= 0V, I
= -10V, R
Test Condition
GS
, I
F
D
S
D
= -5.3A,
D
= -5.3A
= -25 µA
D
D
D
D
DS
GS
D
D
DS
= -250µA
DS
GS
GS
DS
= -5.3A
= -1.0A
= -5.3A.
= -5.3A
= -5.3A
GEN
= -4.7A
= -4.2A
= 0V
= 0V
= 0V
= 0V
= -5.0V
= -5.0V
= 0V
= 6.0W
DI9435