SI7820DN-T1-GE3 Vishay, SI7820DN-T1-GE3 Datasheet

MOSFET N-CH 200V 1.7A 1212-8

SI7820DN-T1-GE3

Manufacturer Part Number
SI7820DN-T1-GE3
Description
MOSFET N-CH 200V 1.7A 1212-8
Manufacturer
Vishay
Datasheet

Specifications of SI7820DN-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
240 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7820DN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7820DN-T1-GE3
Manufacturer:
TI
Quantity:
2 391
Part Number:
SI7820DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7820DN-T1-GE3
Quantity:
800
Company:
Part Number:
SI7820DN-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72581
S10-2136-Rev. E, 20-Sep-10
Ordering Information: Si7820DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
DS
200
(V)
8
3.30 mm
D
7
0.240 at V
D
0.250 at V
6
PowerPAK
R
D
Si7820DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
5
Bottom View
D
GS
GS
()
= 10 V
J
a
= 6 V
®
= 150 °C)
a
1
1212-8
S
2
N-Channel 200 V (D-S) MOSFET
S
a
3
S
I
D
3.30 mm
2.6
2.5
4
(A)
G
a
b, c
A
Q
= 25 °C, unless otherwise noted)
Steady State
Steady State
g
12.1
L = 0 1 mH
T
T
T
T
(Typ.)
A
A
A
A
t  10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• 100 % R
• Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
• Primary Side Switch
Symbol
Symbol
T
R
R
J
Definition
- Telecom Power Supplies
- Distributed Power Architectures
- Miniature Power Modules
V
V
E
I
I
PWM-Optimized TrenchFET
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
Typical
10 s
2.6
2.1
3.2
3.8
2.0
1.9
26
65
- 55 to 150
± 20
200
260
3.5
0.6
10
Steady State
Maximum
®
Power MOSFET
1.7
1.3
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
G
Si7820DN
N-Channel MOSFET
www.vishay.com
°C/W
D
S
Unit
Unit
mJ
°C
W
V
A
1

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SI7820DN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7820DN-T1-E3 (Lead (Pb)-free) Si7820DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7820DN Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72581 S10-2136-Rev. E, 20-Sep- 2.4 2.0 1.6 1.2 0.8 0 °C J 0.8 1.0 1.2 Si7820DN Vishay Siliconix 800 700 C iss 600 500 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 2.6 A ...

Page 4

... Si7820DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 1000 I Limited ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72581. Document Number: 72581 S10-2136-Rev. E, 20-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7820DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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