IRF6617 International Rectifier, IRF6617 Datasheet

IRF6617

Manufacturer Part Number

IRF6617

Description

MOSFET N-CH 30V 14A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6617.pdf (9 pages)

Specifications of IRF6617

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8.1 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

14A

Vgs(th) (max) @ Id

2.35V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1300pF @ 15V

Power - Max

2.1W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6617
IRF6617TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6617

Manufacturer:

Quantity:

4 800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6617

Manufacturer:

Quantity:

1 407

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6617

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6617TR

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6617TR1

Manufacturer:

IOR

Quantity:

240

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6617TR1

Manufacturer:

Quantity:

4 798

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6617TR1

Manufacturer:

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

Part Number:

IRF6617TRPBF

Manufacturer:

IOR-PBF

Quantity:

3 800

Company:

H&T Electronics

Part Number:

IRF6617TRPBF

Quantity:

9 000

Current page: 1 of 9
Download datasheet (219Kb)

Notes through ˆ are on page 2

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

Description

The IRF6617 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET

achieve the lowest on-state resistance in a package that has the footprint of a

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-

ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-

ing previous best thermal resistance by 80%.

The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are

critical in synchronous buck converters including

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJC

θJ-PCB

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

Low Switching Losses

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with Existing Surface Mount Techniques

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Ã™

™

Parameter

DS(on)

@ 10V

and gate charge to minimize losses in the control FET socket.

Ãf

30V

DSS

Micro8™

Typ.

12.5

–––

1.0

10.3mΩ@V

8.1mΩ@V

and only 0.7 mm profile. The DirectFET

DirectFET™ Power MOSFET

-40 to + 150

DS(on)

Max.

0.017

120

±20

2.1

1.4

max

Max.

= 10V

= 4.5V

–––

3.0

IRF6617

DirectFET™ ISOMETRIC

Qg(typ.)

packaging to

11nC

Units

W/°C

°C/W

°C

11/3/05

Related parts for IRF6617

IRF6617 Summary of contents

Page 1

... The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH 2. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10 25°C 1.0 V ...

Page 4

150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125° 25°C 4 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS ...

Page 6

D.U.T + ƒ • • - • + ‚ - R • • • • Fig 17. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 7

DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com DIMENSIONS METRIC IMPERIAL CODE ...

Page 8

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6617). For 1000 parts on 7" reel, order IRF6617TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 REEL DIMENSIONS ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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