SI7804DN-T1-E3 Vishay, SI7804DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7804DN-T1-E3
• Description: MOSFET N-CH 30V 6.5A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7804DN-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7804DN-T1-E3TR

Si7804DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
125
Safe Operating Area, Junction-to-Foot
GS
> minimum V
V
150
DS
Square Wave Pulse Duration (s)
DS(on)
Single Pulse
- Drain-to-Source Voltage (V)
T
C
10
1
= 25 °C
*
-1
GS
at which R
DS(on)
10
50
40
30
20
10
0
0.01
1
is specified
Single Pulse Power, Junction-to-Ambient
100 ms
1 s
10 s
1 ms
10 ms
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
Time (s)
- T
t
A
1
= P
S-83050-Rev. F, 29-Dec-08
t
Document Number: 72317
2
DM
10
Z
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
600
600