SI7456DP-T1-E3 Vishay, SI7456DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7456DP-T1-E3
• Description: MOSFET N-CH 100V 5.7A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7456DP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9.3A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 5.2W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7456DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
0.04
0.03
0.02
0.01
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.3 A
On-Resistance vs. Drain Current
0.2
= 50 V
6
8
T
V
J
SD
Q
= 150 °C
g
- - Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
12
I
D
- Drain Current (A)
Gate Charge
16
0.6
18
24
V
GS
0.8
24
= 6.0
T
J
V
= 25 °C
GS
32
1.0
30
= 10 V
1.2
40
36
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
2.6
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 9.3 A
10
C
= 10 V
2
rss
V
V
DS
GS
T
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
20
Capacitance
25
4
C
30
C
50
oss
iss
Vishay Siliconix
I
D
6
75
= 9.3 A
40
Si7456DP
100
www.vishay.com
8
50
125
60
150
10
3