IRF630PBF Vishay, IRF630PBF Datasheet - Page 4

• Manufacturer Part Number: IRF630PBF
• Description: MOSFET N-CH 200V 9A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF630PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Fall Time: 20 ns
• Rise Time: 28 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF630PBF

IRF630, SiHF630
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91031_05
91031_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1600
1200
800
400
20
16
12
0
8
4
0
10
0
0
I
D
= 5.9 A
V
DS ,
10
Q
V
G
Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 40 V
V
DS
20
= 100 V
V
C
C
C
GS
iss
rss
oss
V
DS
= C
= 0 V, f = 1 MHz
= C
= C
= 160 V
10
gs
gd
ds
30
1
+ C
+ C
C
C
C
rss
gd
oss
iss
gd
For test circuit
see figure 13
, C
40
ds
This datasheet is subject to change without notice.
Shorted
50
91031_07
91031_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
0
1
3
5
2
2
5
2
5
2
5
2
1
0.5
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
°
V
V
C
5
SD
DS
0.7
1
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
T
T
Single Pulse
2
C
J
25
= 150 °C
= 25 °C
5
°
C
0.9
10
by R
2
DS(on)
5
10
1.1
S11-0509-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
2
Document Number: 91031
2
10
10
100
1
ms
ms
5
µs
µs
10
1.3
V
3
GS
2
= 0 V
5
10
1.5
4