IRFD9110PBF Vishay, IRFD9110PBF Datasheet - Page 2

MOSFET P-CH 100V 700MA 4-DIP

IRFD9110PBF

Manufacturer Part Number
IRFD9110PBF
Description
MOSFET P-CH 100V 700MA 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFD9110PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 420mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
700mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.7 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-700mA
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.2Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD9110PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD9110PBF
Manufacturer:
SILI
Quantity:
6 281
Part Number:
IRFD9110PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
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70 000
Company:
Part Number:
IRFD9110PBF
Quantity:
25 780
IRFD9110, SiHFD9110
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
R
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
L
SM
t
I
thJA
t
t
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
= 25 °C, I
T
DS
Reference to 25 °C, I
= - 10 V
J
= - 10 V
= 25 °C, I
= - 80 V, V
V
V
V
V
V
TYP.
DS
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
DD
R
DS
DS
GS
-
g
= - 50 V, I
F
= - 100 V, V
= - 50 V, I
= V
= 24 , R
= 0 V, I
= - 4.0 A, dI/dt = 100 A/μs
V
V
see fig. 10
GS
V
DS
S
GS
I
GS
D
= - 0.7 A, V
GS
= - 25 V,
, I
= ± 20 V
= - 4.0 A, V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
D
= - 250 μA
I
= - 250 μA
D
D
D
= - 0.42 A
= - 4.0 A
= 11
GS
= - 0.42 A
D
b
= - 1 mA
= 0 V
J
GS
G
G
= 150 °C
DS
= 0 V
= - 80 V
b
MAX.
D
S
120
D
S
b
b
b
- 100
MIN.
- 2.0
0.60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2464-Rev. C, 25-Oct-10
Document Number: 91138
- 0.091
TYP.
0.15
200
4.0
6.0
94
18
10
27
15
17
82
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 0.70
- 100
- 500
- 4.0
- 5.6
- 5.5
0.30
160
1.2
8.7
2.2
4.1
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nC
nH
μC
nA
μA
pF
ns
ns
S
A
V
V
V

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