IRFL210 Vishay, IRFL210 Datasheet
IRFL210
Specifications of IRFL210
Available stocks
Related parts for IRFL210
IRFL210 Summary of contents
Page 1
... Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 IRFL210PbF SiHFL210-E3 IRFL210 SiHFL210 = 25 °C, unless otherwise noted ° 100 °C C IRFL210, SiHFL210 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL210TRPbF a SiHFL210T-E3 a IRFL210TR a SiHFL210T SYMBOL LIMIT V 200 ...
Page 2
... IRFL210, SiHFL210 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). ...
Page 3
... Pulse Width ° 91193_03 = 25 °C C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91193_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL210, SiHFL210 Vishay Siliconix MIN. TYP. MAX 150 310 b - 0.60 1 ° 150 C ° ...
Page 4
... IRFL210, SiHFL210 Vishay Siliconix 300 MHz iss gs 250 rss oss ds 200 C iss 150 C oss 100 C 50 rss Drain-to-Source Voltage ( 91193_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91193_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91193_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91193 S-81377-Rev. A, 30-Jun-08 Fig. 10a - Switching Time Test Circuit 90 % 125 150 10 % Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 IRFL210, SiHFL210 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
Page 6
... IRFL210, SiHFL210 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 120 100 100 Starting T , Junction Temperature (°C) 91193_12C J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFL210, SiHFL210 Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...