IRFP9140PBF Vishay, IRFP9140PBF Datasheet

MOSFET P-CH 100V 21A TO-247AC

IRFP9140PBF

Manufacturer Part Number
IRFP9140PBF
Description
MOSFET P-CH 100V 21A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP9140PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
180000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-21A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP9140PBF

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Price
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Manufacturer:
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Quantity:
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Quantity:
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Company:
Part Number:
IRFP9140PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
TO-247AC
≤ - 21 A, dI/dt ≤ 200 A/μs, V
= - 25 V, starting T
(Ω)
D
a
J
= 25 °C, L = 3.3 mH, R
c
a
a
V
b
GS
DD
= - 10 V
≤ V
G
DS
, T
P-Channel MOSFET
Single
- 100
J
61
14
29
≤ 175 °C.
This datasheet is subject to change without notice.
g
C
S
D
= 25 Ω, I
= 25 °C, unless otherwise noted)
Power MOSFET
0.20
V
GS
at - 10 V
6-32 or M3 screw
AS
= - 21 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
TO-247AC
IRFP9140PbF
SiHFP9140-E3
IRFP9140
SiHFP9140
C
C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
= 100 °C
= 25 °C
TO-247AC
SYMBOL
T
dV/dt
device
J
V
V
E
E
I
I
P
, T
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFP9140, SiHFP9140
design,
package
- 55 to + 175
LIMIT
- 100
300
± 20
- 5.5
- 21
- 15
- 84
- 21
960
180
low
1.2
1.1
18
10
www.vishay.com/doc?91000
Vishay Siliconix
d
is
on-resistance
preferred
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
for
1

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IRFP9140PBF Summary of contents

Page 1

... TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP9140PbF SiHFP9140-E3 IRFP9140 SiHFP9140 = 25 °C, unless otherwise noted) C ...

Page 2

... IRFP9140, SiHFP9140 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91238 S11-0444-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP9140, SiHFP9140 Vishay Siliconix www.vishay.com www.vishay.com/doc?91000 3 ...

Page 4

... IRFP9140, SiHFP9140 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... Document Number: 91238 S11-0444-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP9140, SiHFP9140 Vishay Siliconix D.U. Pulse width ≤ ...

Page 6

... IRFP9140, SiHFP9140 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... V for logic level and - 3 V drive device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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