IRFP9240PBF Vishay, IRFP9240PBF Datasheet - Page 2
![MOSFET P-CH 200V 12A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP9240PBF
Manufacturer Part Number
IRFP9240PBF
Description
MOSFET P-CH 200V 12A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFP9240PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.5Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP9240PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP9240PBF
Manufacturer:
SANYO
Quantity:
401
Part Number:
IRFP9240PBF
Manufacturer:
IR
Quantity:
20 000
IRFP9240, SiHFP9240
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
ΔV
R
V
C
t
t
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
L
L
SM
t
I
t
t
on
thCS
thJC
DS
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
GS
GS
J
V
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
= - 10 V
= - 10 V
Reference to 25 °C, I
J
= - 160 V, V
= 25 °C, I
V
V
V
V
V
R
DD
f = 1.0 MHz, see fig. 5
GS
DS
DS
DS
TYP.
TEST CONDITIONS
0.24
G
-
-
= - 100 V, I
= - 50 V, I
F
= 0 V, I
= V
= - 200 V, V
= 9.1 Ω, R
V
V
= - 11 A, dI/dt = 100 A/μs
see fig. 10
GS
V
DS
S
GS
I
D
GS
= - 12 A, V
GS
= - 25 V,
, I
= ± 20 V
= - 11 A, V
D
= 0 V,
see fig. 6 and 13
D
= 0 V, T
= - 250 μA
= - 250 μA
D
I
D
D
D
= 8.6 Ω,
= - 7.2 A
GS
= - 7.2 A
= - 11 A
b
D
= 0 V
= - 1 mA
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V
b
MAX.
D
S
b
b
0.83
D
S
40
-
b
- 200
MIN.
- 2.0
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0444-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 91239
- 0.20
TYP.
1200
370
250
5.0
2.9
81
14
43
39
38
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 5.0
0.50
- 12
- 48
300
7.1
3.6
S
44
27
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V