IRFR5305PBF International Rectifier, IRFR5305PBF Datasheet - Page 2
IRFR5305PBF
Manufacturer Part Number
IRFR5305PBF
Description
MOSFET P-CH 55V 31A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRFR5305PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
31A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Channel Type
P
Current, Drain
-31 A
Gate Charge, Total
63 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.065 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR5305PBF
Manufacturer:
IR
Quantity:
65 000
Part Number:
IRFR5305PBF
Manufacturer:
IR
Quantity:
20 000
IRFR/U5305PbF
** Uses typical socket mount.
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Notes:
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
GSS
d(on)
r
d(off)
f
SM
rr
S
fs
D
S
2
(BR)DSS
GS(th)
iss
rss
DS(on)
g
gs
gd
oss
SD
rr
Repetitive rating; pulse width limited by
I
T
max. junction temperature. (See Fig. 11)
V
(BR)DSS
R
SD
J
DD
G
≤ 175 C
≤ -16A, di/dt ≤ -280A/ s, V
= 25Ω I
= -25V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
J
= 25 C, L = 2.1mH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
This is applied for I-PAK, L
Uses IRF5305 data and test conditions.
lead and center of die contact.
Pulse width ≤ 300 s; duty cycle ≤ 2%.
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
-55
8.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.034 –––
1200 –––
–––
––– 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
250
–––
–––
170
4.5
14
66
39
63
71
-250
-100
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
-110
-1.3
–––
110
250
-25
63
13
29
V/ C
nH
µA
nA
nC
ns
pF
nC
ns
Ω
V
V
S
V
S
of D-PAK is measured between
V
Reference to 25 C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6Ω, See Fig. 10
= 6.8Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13
= -28V
= -25V
= 0V
GS
, I
D
F
S
D
Conditions
= -250 A
D
D
Conditions
= -16A
= -16A, V
GS
GS
= -250 A
= -16A
= -16A
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 150 C
= 0V
G
D
S
S
D