IRFH5255TR2PBF International Rectifier, IRFH5255TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5255TR2PBF
• Description: MOSFET N-CH 25V 15A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5255TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 988pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5255TR2PBFTR

IRFH5255PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
55
50
45
40
35
30
25
20
15
10
10
Fig 9. Maximum Drain Current Vs.
0.001
5
0
1
0.01
0.2
25
0.1
10
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
V SD , Source-to-Drain Voltage (V)
T J = 150°C
50
T C , Case Temperature (°C)
0.4
D = 0.50
0.10
0.05
0.02
0.01
0.20
75
0.6
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
100
T J = 25°C
V GS = 0V
0.8
125
t 1 , Rectangular Pulse Duration (sec)
150
1.0
0.0001
0.001
Fig 10. Threshold Voltage Vs. Temperature
100
3.0
2.5
2.0
1.5
1.0
0.5
10
1
-75 -50 -25
0
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 150µA
ID = 25µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
T J , Temperature ( °C )
DS
0.01
1
0
(on)
25
10msec
50
1msec
100µsec
10
75 100 125 150
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0.1
100