IRFU6215PBF International Rectifier, IRFU6215PBF Datasheet - Page 2
IRFU6215PBF
Manufacturer Part Number
IRFU6215PBF
Description
MOSFET P-CH 150V 13A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU6215PBF.pdf
(11 pages)
Specifications of IRFU6215PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
295 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 13 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
44 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU6215PBF
Electrical Characteristics @ T
IRFR/U6215PbF
Source-Drain Ratings and Characteristics
Notes:
L
** When mounted on 1" square PCB (FR-4 or G-10 Material )
R
I
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
D
S
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Starting T
2
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
≤ 175°C
= 25Ω, I
≤-6.6A, di/dt ≤ -620A/µs, V
/∆T
J
J
= 25°C, L = 14mH
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= -6.6A. (See Figure 12)
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, L
Uses IRF6215 data and test conditions
center of die contact
Min.
-150
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Typ. Max. Units
-0.20 –––
–––
––– 0.295
––– 0.58
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
860
220
130
–––
–––
–––
160
7.5
4.5
1.2
14
36
53
37
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.6
240
-25
8.1
1.7
35
–––
66
-44
-13
V/°C Reference to 25°C, I
nC
nH
µA
nA
pF
µC
ns
ns
Ω
V
V
S
V
S
A
of D-PAK is measured between lead and
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -6.6A
= -6.6A
= 25°C, I
= 25°C, I
= 12Ω, See Fig. 10
= 6.8Ω
= V
= -50V, I
= -150V, V
= -120V, V
= -120V
= -75V
= -25V
= 0V, I
= -10V, I
= -10V, I
= 20V
= -20V
= -10V, See Fig. 6 and 13
= 0V
GS
, I
D
S
F
D
Conditions
D
= -250µA
D
D
Conditions
= -6.6A, V
= -6.6A
= -250µA
= -6.6A T
= -6.6A
= -6.6A
GS
GS
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
J
= 0V
= 150°C
= 150°C
G
S
+L
D
)
D
S
S
D