IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet - Page 8
![MOSFET N-CH 40V 42A I-PAK](/photos/5/54/55463/irlu3114zpbf_sml.jpg)
IRLU3114ZPBF
Manufacturer Part Number
IRLU3114ZPBF
Description
MOSFET N-CH 40V 42A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLU3114ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
56nC @ 4.5V
Input Capacitance (ciss) @ Vds
3810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
130A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Threshold Voltage Vgs Typ
2.5V
Resistance Drain-source Rds (on)
6.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
130 A
Power Dissipation
140 W
Mounting Style
SMD/SMT
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLU3114ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
8
+
-
D.U.T
Fig 17.
+
-
•
•
•
•
SD
•
•
•
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
t
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V