IRLR3303 International Rectifier, IRLR3303 Datasheet

IRLR3303

Manufacturer Part Number

IRLR3303

Description

MOSFET N-CH 30V 35A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRLR3303.pdf (11 pages)

Specifications of IRLR3303

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

31 mOhm @ 21A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

35A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

26nC @ 4.5V

Input Capacitance (ciss) @ Vds

870pF @ 25V

Power - Max

68W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRLR3303
Q811927

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Thermal Resistance

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

www.irf.com

dv/dt

STG

For recommended footprint and soldering techniques refer to application note #AN-994

@ T

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount (IRLR3303)

Straight Lead (IRLU3303)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

= 100°C

= 25°C

Junction-to-Case

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

HEXFET

-55 to + 175

IRLR/U3303

Max.

0.45

140

± 16

130

6.8

5.0

T O -252 A A

D -P ak

Power MOSFET

DS(on)

Max.

110

2.2

DSS

= 35A

= 0.031

PD- 91316F

= 30V

T O -25 1A A

I-P ak

Units

°C/W

W/°C

V/ns

°C

9/28/98

Related parts for IRLR3303

IRLR3303 Summary of contents

Page 1

... Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3303) Straight Lead (IRLU3303) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

Page 2

IRLR/U3303 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRLR3303 International Rectifier, IRLR3303 Datasheet

IRLR3303

Specifications of IRLR3303

Available stocks

Related parts for IRLR3303

IRLR3303 Summary of contents

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