IRLH5036TR2PBF International Rectifier, IRLH5036TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRLH5036TR2PBF
• Description: MOSFET N-CH 60V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLH5036TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 150µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLH5036TR2PBFTR

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Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
100000
10000
Fig 3. Typical Transfer Characteristics
1000
1000
1000
Fig 1. Typical Output Characteristics
100
100
100
0.1
10
0.1
10
1
1
0.1
1.5
1
TOP
BOTTOM
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5
VGS
15V
10V
4.5V
4.0V
3.3V
3.1V
2.9V
2.7V
1
T J = 25°C
2.7V
≤ 60µs
Tj = 25°C
f = 1 MHZ
10
V DS = 25V
≤60µs PULSE WIDTH
3.5
C rss
C iss
C oss
PULSE WIDTH
10
4.5
100
100
5.5
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
1000
100
Fig 4. Normalized On-Resistance Vs. Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
10
1
8
6
4
2
0
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 50A
TOP
BOTTOM
I D = 50A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
10V
4.5V
4.0V
3.3V
3.1V
2.9V
2.7V
V DS = 48V
V DS = 30V
VDS= 12V
40
1
20 40 60 80 100 120 140 160
≤ 60µs
Tj = 150°C
2.7V
60
PULSE WIDTH
10
80
100
100
120
3