IRFL014N International Rectifier, IRFL014N Datasheet - Page 5

• Manufacturer Part Number: IRFL014N
• Description: MOSFET N-CH 55V 1.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL014N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL014N

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1 0 0 0
1 0 0
0.1
1 0
0 . 0 0 0 0 1
1
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
10V
12V
V
V
D = 0.5 0
GS
G
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
0 .05
0.20
0.10
0 .02
0 .01
Current Regulator
.2 F
Q
GS
(T H ER M A L R ES P O NS E)
0 . 0 0 0 1
50K
3mA
SING L E P U LS E
Current Sampling Resistors
.3 F
Q
Charge
I
Q
G
GD
G
D.U.T.
0 . 0 0 1
I
D
+
-
V
t , Re ctan gular Pulse D u ration (se c)
DS
1
0 . 0 1
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
10V
V
t
1
d(on)
GS
N o te s :
1 . D u ty fa c to r D = t
2 . P e a k T = P
V
DS
t
r
µs
J
1 0
D M
D.U.T.
IRFL014N
x Z
1
R
/ t
th J A
D
2
t
P
d(off)
D M
+ T
1 0 0
A
t
t
1
f
t 2
+
-
V
DD
5
1 0 0 0
A