NTGS3443T1G ON Semiconductor, NTGS3443T1G Datasheet - Page 6
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NTGS3443T1G
Manufacturer Part Number
NTGS3443T1G
Description
MOSFET P-CH 20V 2.2A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3443T1G.pdf
(6 pages)
Specifications of NTGS3443T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
565pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.4 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3443T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTGS3443T1G
Manufacturer:
ON
Quantity:
33 000
Company:
Part Number:
NTGS3443T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTGS3443T1G
Manufacturer:
ON
Quantity:
1 918
Part Number:
NTGS3443T1G
Manufacturer:
ON/安森美
Quantity:
20 000
PUBLICATION ORDERING INFORMATION
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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0.05 (0.002)
H
E
e
A1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
6
1
D
5
2
0.075
*For additional information on our Pb−Free strategy and soldering
3
4
1.9
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
b
0.037
0.037
A
0.95
0.95
E
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
SOLDERING FOOTPRINT*
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
http://onsemi.com
L
CASE 318G−02
ISSUE P
TSOP−6
0.094
2.4
c
6
q
0.039
1.0
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. DIMENSIONS A AND B DO NOT INCLUDE
STYLE 1:
PIN 1. DRAIN
DIM
A1
H
SCALE 10:1
A
D
E
q
ANSI Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
b
c
e
L
E
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
0.028
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
MIN
0.7
0°
MILLIMETERS
inches
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
mm
−
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MAX
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
10°
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
MIN
0°
NTGS3443T1/D
INCHES
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
NOM
−
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
MAX
10°