SI1473DH-T1-E3 Vishay, SI1473DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1473DH-T1-E3
• Description: MOSFET P-CH 30V 2.7A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1473DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 365pF @ 15V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 145mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1473DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
0.20
0.16
0.12
0.08
0.04
0.00
10
10
8
6
4
2
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0.0
0
I
D
= 2.5 A
0.6
1.6
2
V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
V
- Total Gate Charge (nC)
GS
I
D
= 10 V
Gate Charge
1.2
3.2
- Drain Current (A)
4
= 4.5 V
V
GS
V
V
GS
DS
= 10 V thru 5 V
1.8
4.8
= 20 V
6
= 10 V
4 V
V
DS
= 15 V
2.4
6.4
8
3 V
3.0
8.0
10
600
480
360
240
120
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
1
0
C
On-Resistance vs. Junction Temperature
I
D
rss
- 25
= 2 A
6
T
V
V
J
25 °C
2
GS
Transfer Characteristics
DS
0
T
= 125 °C
C
J
C
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
Capacitance
12
V
- 55 °C
GS
50
3
Vishay Siliconix
= 10 V
18
75
Si1473DH
www.vishay.com
100
4
V
24
GS
= 4.5 V
125
150
30
5
3