IRFZ44NSTRLPBF International Rectifier, IRFZ44NSTRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ44NSTRLPBF
• Description: MOSFET N-CH 55V 49A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1470pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 49 A
• Gate Charge, Total: 63 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 94 W
• Resistance, Drain To Source On: 17.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 44 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 49A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 17.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFZ44NSTRLPBF; IRFZ44NSTRLPBFTR

Source-Drain Ratings and Characteristics

Electrical Characteristics @ T
‚
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
V
t
Q
t
DSS
GSS
S
on
d(on)
d(off)
f
SM
rr
r
fs
S
(BR)DSS
GS(th)
AS
SD
DS(on)
gd
iss
oss
rss
g
gs
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
2
max. junction temperature. (See fig. 11)
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.48mH
AS
= 25A. (See Figure 12)
Parameter

Parameter
J
= 25°C (unless otherwise specified)
‚
ƒ
„
…
†
I
This is a calculated value limited to T
T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
SD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 530… 150†
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
55
19
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 25A di/d ≤ 230A/µs, V
0.058 –––
1470 –––
170
–––
––– 17.5
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
360
–––
–––
–––
7.5
63
12
60
44
45
88
–––
260
–––
–––
250
100
–––
–––
–––
–––
–––
–––
1.3
4.0
160
95
25
63
14
23
49
V/°C
mΩ
nC
nH
mJ
nC
µA
nA
ns
pF
ns
V
V
S
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
and center of die contact
V
V
I
DD
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 25A, L = 0.47mH
≤ V
= 12Ω
= 0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 0V
= 25V
= 10V, I
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
= 250µA
GS
GS
Conditions
= 25A, V
= 25A
Conditions
= 250µA
,
= 25A „
= 25A„
„
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
„
S
+L
D
S
D
)