IRF1010NSTRLPBF International Rectifier, IRF1010NSTRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1010NSTRLPBF
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010NSTRLPBF; IRF1010NSTRLPBFTR

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
ƒ
„
…
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
I
represents operation outside rated limits.
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
SD
J
G
≤ 175°C
≤ 43A di/d ≤ 210A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 270µH
AS
= 43A, V
GS

Parameter
Parameter
=10V (See Figure 12)
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚ˆ
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1030…250†
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
†
‡
ˆ
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
55
32
–––
–––
–––
–––
–––
–––
application note #AN-994.
For recommended footprint and soldering techniques refer to
Intrinsic turn-on time is negligible (turn-on is dominated by L
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
Uses IRF1010N data and test conditions.
junction temperature. Package limitation current is 75A.
0.058 –––
3210 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
690
140
220
–––
–––
–––
13
76
39
48
69
–––
85
–––
–––
250
100
120
–––
–––
–––
–––
–––
–––
–––
100
230
4.0
1.3
11
25
19
41
290
‡
V/°C
mΩ
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 43A
= 43A
= 25°C, I
= 25°C, I
= 4.3A, L = 270µH
= 3.6Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 0V
= 25V
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
J
Conditions
GS
GS
= 43A
= 43A, V
= 43A
= 250µA
= 43A„
= 175°C .
„ˆ
= 0V
= 0V, T
D
www.irf.com
= 1mA
ˆ
GS
„
J
ˆ
= 150°C
= 0V
G
ˆ
G
ˆ
S
„
+L
„ˆ
D
S
D
)
S
D