2N7002K-7 Diodes Inc, 2N7002K-7 Datasheet - Page 3

• Manufacturer Part Number: 2N7002K-7
• Description: MOSFET N-CH 60V 300MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of 2N7002K-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 800mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

2N7002K
Document number: DS30896 Rev. 4 - 2
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
1.5
0.5
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
10
2
0
1
-50
0
Fig. 7
-25
T , CHANNEL TEMPERATURE (°C)
ch
T
CH
Static Drain-Source On-State Resistance
I , DRAIN CURRENT (A)
0
, CHANNEL TEMPERATURE ( C)
D
vs. Channel Temperature
25
50
75
100
125
°
150
1
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Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
0.1
10
1
0
V
GS
I , DRAIN CURRENT (A)
D
,
GATE SOURCE VOLTAGE (V)
2N7002K
© Diodes Incorporated
January 2011