2N7002E-7-F Diodes Inc, 2N7002E-7-F Datasheet
2N7002E-7-F
Manufacturer Part Number
2N7002E-7-F
Description
MOSFET N-CH 60V 240MA SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.2N7002E-7-F.pdf
(4 pages)
Specifications of 2N7002E-7-F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
240mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.24 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
•
•
•
•
•
•
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
2N7002E
Document number: DS30376 Rev. 8 - 2
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 2 and 4)
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
V12 are built with Non-Green Molding Compound and may contain Halogens or Sb
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GS
≤ 1.0MΩ
Characteristic
Characteristic
Characteristic
DS(ON)
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous
A
Continuous
Pulsed
A
@ T
= 25°C unless otherwise specified
@ T
@ T
= 25°C unless otherwise specified
C
C
J
TOP VIEW
= 25°C
= 125°C
= 25°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
Symbol
R
SOT-23
BV
V
t
I
t
D(OFF)
DS (ON)
I
I
D(ON)
C
D(ON)
1 of 4
C
C
GS(th)
g
DSS
GSS
FS
oss
rss
DSS
iss
Mechanical Data
•
•
•
•
•
•
•
•
Symbol
Symbol
T
V
J,
V
V
R
P
DGR
GSS
DSS
I
T
θ
D
Min
D
JA
1.0
0.8
STG
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Pin Out Configuration
2
O
G
3
TOP VIEW
Typ
Fire Retardants.
1.6
2.0
1.0
2.0
7.0
70
⎯
⎯
⎯
⎯
22
11
11
D
Max
500
±10
1.0
2.5
5.0
⎯
⎯
⎯
50
25
20
20
3
4
S
-55 to +150
Unit
mS
µA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
Value
Value
±20
±40
240
300
417
60
60
V
V
V
V
V
V
V
V
V
V
R
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
L
= 150Ω, V
= 60V, V
= 0V, I
= V
=10V, I
= 25V, V
= ±15V, V
= 10V, I
= 4.5V, I
= 10V, V
= 30V, I
GS
, I
Test Condition
D
D
D
D
D
= 10μA
GS
D
GS
GEN
DS
= 0.2A
= 250μA
= 250mA
= 0.2A,
DS
= 200mA
= 0V
= 7.5V
= 0V, f = 1.0MHz
= 0V
= 10V, R
© Diodes Incorporated
2N7002E
Units
Units
°C/W
mW
mA
°C
V
V
V
GEN
June 2010
= 25Ω
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2N7002E-7-F Summary of contents
Page 1
... J DS (ON) ⎯ 0.8 I D(ON ⎯ C iss ⎯ C oss ⎯ C rss ⎯ t D(ON) ⎯ t D(OFF www.diodes.com 2N7002E D S TOP VIEW Value Units 60 60 ±20 ±40 240 Value Units 300 417 °C/W -55 to +150 Typ Max Unit Test Condition ⎯ 0V 10μ ⎯ ...
Page 2
... GS 100 100 125 150 Fig. 6 Max Power Dissipation vs. Ambient Temperature www.diodes.com 2N7002E T = -55° 25° 125° GATE TO SOURCE VOLTAGE (V) GS Fig. 2 Drain Current vs. Gate-Source Voltage 10V GS 0.2 0.6 0.8 0 DRAIN CURRENT (A) D Fig Resistance vs. Drain Current ...
Page 3
... Ordering Information (Note 5) Part Number 2N7002E-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2003 2004 Code P R Month Jan Feb Code 1 2 Package Outline Dimensions Suggested Pad Layout 2N7002E Document number: DS30376 Rev Case ...
Page 4
... Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com 2N7002E Document number: DS30376 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com 2N7002E June 2010 © Diodes Incorporated ...