SI2303BDS-T1-E3 Vishay, SI2303BDS-T1-E3 Datasheet - Page 3
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SI2303BDS-T1-E3
Manufacturer Part Number
SI2303BDS-T1-E3
Description
MOSFET P-CH 30V 1.49A SOT23-3
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI2303BDS-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.49A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 15V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.3 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.49µA
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303BDS-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2303BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
24 722
Company:
Part Number:
SI2303BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
12
Part Number:
SI2303BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
0.8
0.6
0.4
0.2
0.0
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
GS
V
I
D
DS
On-Resistance vs. Drain Current
= 1.7 A
= 4.5 V
= 15 V
2
1
2
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
4
2
V
GS
= 10 thru 6 V
6
6
3
V
GS
= 10 V
8
8
4
2 V, 3 V
5 V
4 V
10
10
5
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
10
50
0
8
6
4
2
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
1
= 1.7 A
5
= 10 V
V
V
T
GS
Transfer Characteristics
0
DS
J
2
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
10
- Drain-to-Source Voltage
oss
Capacitance
25
3
T
C
C
50
iss
15
Vishay Siliconix
= - 55°C
25 °C
4
Si2303BDS
75
20
5
100
www.vishay.com
125 °C
25
125
6
150
30
7
3