SI2303BDS-T1-E3 Vishay, SI2303BDS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2303BDS-T1-E3
• Description: MOSFET P-CH 30V 1.49A SOT23-3
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2303BDS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.49A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -1.49µA
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 380mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2303BDS-T1-E3TR

Si2303BDS
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
c
a
a
a
J
= 25 °C, unless otherwise noted
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
g
V
DS
V
V
DS
DS
= - 15 V, V
I
= - 30 V, V
D
V
= - 15 V, V
V
V
V
V
V
V
V
I
V
GS
S
DS
DS
≅ - 1.0 A, V
GS
DS
DD
DS
DS
GS
= - 0.75 A, V
Test Conditions
= - 4.5 V, I
= V
≤ - 5 V, V
= - 10 V, I
= 0 V, V
= - 30 V, V
= - 15 V, R
= - 5 V, I
= 0 V, I
GS
R
GS
G
GS
GS
, I
= 6 Ω
= - 10 V, I
D
D
GS
GEN
= 0 V, T
= 0 V, f = 1 MHz
GS
D
D
= - 250 µA
= - 10 µA
D
= - 1.7 A
GS
GS
= ± 20 V
L
= - 1.7 A
= - 1.3 A
= - 10 V
= - 4.5 V
= 15 Ω
= 0 V
= 0 V
J
D
= 55 °C
≅ - 1.7 A
Min.
- 1.0
- 30
- 6
Limits
0.150
0.285
- 0.85
Typ.
180
2.0
4.3
0.8
1.3
50
35
55
40
10
10
S-80642-Rev. C, 24-Mar-08
Document Number: 72065
± 100
0.200
0.380
Max.
- 3.0
- 1.2
- 10
- 1
10
80
60
20
20
Unit
nC
nA
µA
pF
ns
Ω
V
A
S
V