ZXMN3B01FTA Diodes Zetex, ZXMN3B01FTA Datasheet - Page 4

MOSFET N-CHAN 30V 2A SOT23-3

ZXMN3B01FTA

Manufacturer Part Number
ZXMN3B01FTA
Description
MOSFET N-CHAN 30V 2A SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN3B01FTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
2.93nC @ 4.5V
Input Capacitance (ciss) @ Vds
258pF @ 15V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN3B01FTA

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3B01FTA
Manufacturer:
ZETEX
Quantity:
45 000
Part Number:
ZXMN3B01FTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3B01F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
0.7
30
10.85
TYP.
2.69
3.98
5.27
2.93
0.57
0.92
0.85
258
50
30
4
8
5
2%.
0.150
0.240
MAX. UNIT CONDITIONS
0.95
100
1
nA
nC
nC
nC
NC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - DECEMBER 2005
I
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=1.7A
=250 A, V
=250 A, V
= 1A
GS
=25°C, I
=25°C, I
=30V, V
=15V,I
= 15V, V
=15V,V
=4.5V, I
=2.5V, I
=0V
= 15V, V
= 12V, V
6.0
D
S
F
GS
= 1.3A,
= 1.7A,
=1.7A
GS
D
D
GS
GS
DS
=1.7A
=1.2A
GS
= 4.5V,
=0V
DS
=0V,
=0V
= V
= 4.5V
=0V
GS

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