SI1403BDL-T1-E3 Vishay, SI1403BDL-T1-E3 Datasheet

MOSFET P-CH 20V 1.4A SC70-6

SI1403BDL-T1-E3

Manufacturer Part Number
SI1403BDL-T1-E3
Description
MOSFET P-CH 20V 1.4A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI1403BDL-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Power - Max
568mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.15 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.4 A
Power Dissipation
568 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
265mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1403BDL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1403BDL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
31 330
Part Number:
SI1403BDL-T1-E3
Manufacturer:
Maxim
Quantity:
1 916
Part Number:
SI1403BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73253
S10-0110-Rev. D, 18-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
0.150 at V
0.175 at V
0.265 at V
R
DS(on)
GS
GS
GS
= - 4.5 V
= - 3.6 V
= - 2.5 V
(Ω)
J
a
= 150 °C)
a
Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)
G
D
D
P-Channel 2.5-V (G-S) MOSFET
a
1
2
3
SC-70 (6-LEADS)
I
D
- 1.5
- 1.4
- 1.2
(A)
SOT-363
Top View
a
A
Q
= 25 °C, unless otherwise noted
Si1403BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
g
Steady State
Steady State
2.9
T
T
T
T
(Typ.)
A
A
A
A
6
5
4
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
D
D
S
FEATURES
Marking Code
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
OD
Symbol
Symbol
T
Definition
R
R
J
V
V
I
P
, T
I
DM
thJA
I
thJF
DS
GS
D
S
D
X
Part # Code
stg
Lot Traceability
and Date Code
®
Power MOSFET
Typical
0.625
0.400
- 1.5
- 1.2
- 0.8
165
180
105
5 s
- 55 to 150
± 12
- 20
- 5
Steady State
Maximum
0.568
0.295
- 1.4
- 1.0
- 0.8
200
220
130
Vishay Siliconix
Si1403BDL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1403BDL-T1-E3 Summary of contents

Page 1

... DS(on) 0.150 4 0.175 3 0.265 2 Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1403BDL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... J 1 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73253 S10-0110-Rev. D, 18-Jan 2.0 2.5 3 °C J 0.9 1.2 1.5 Si1403BDL Vishay Siliconix 500 400 C 300 iss 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si1403BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.4 0 250 µA D 0.2 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 10 Limited DS(on) 1 0.1 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73253. Document Number: 73253 S10-0110-Rev. D, 18-Jan- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1403BDL Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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