ZXMP6A13FTA Diodes Zetex, ZXMP6A13FTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP6A13FTA
• Description: MOSFET P-CH 60V 900MA SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMP6A13FTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 219pF @ 30V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A13FTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 4)
Forward Transconductance (Notes 4 and 6)
Diode Forward Voltage (Note 4)
Reverse Recovery Time (Note 6)
Reverse Recovery Charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
Total Gate Charge (Note 5)
Total Gate Charge (Note 5)
Gate-Source Charge (Note 5)
Gate-Drain Charge (Note 5)
Notes:
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. For design aid only, not subject to production testing.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
D(on)
D(off)
Q
Q
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
r
f
gs
gd
rr
g
g
www.diodes.com
Min
-1.0
4 of 8
-60
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-0.85
21.1
19.3
25.7
20.5
11.2
0.74
Typ
219
1.8
1.6
2.2
5.7
2.9
5.9
1.5
⎯
⎯
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0.400
0.600
±100
-0.95
Max
-0.5
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Diodes Incorporated
A Product Line of
Unit
μ A
nA
nC
nC
nC
ns
pF
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
T
T
di/dt = 100A/ μ s
V
f = 1.0MHz
V
R
V
I
V
I
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
= -250 μ A, V
= -250 μ A, V
= -0.9A
= -0.9A
= 25°C, I
= 25°C, I
≅ 6.0 Ω, V
= -30V, V
= -30V, V
= -60V, V
= ± 20V, V
= -10V, I
= -4.5V, I
= -15V, I
= -30V, V
= -30V, I
Test Condition
S
F
D
D
D
ZXMP6A13F
= -0.8A, V
= -0.9A,
GS
D
GS
GS
GS
GS
GS
DS
DS
= -0.9A
= -0.9A
= -1A,
= -0.8A
= -10V
= 0V
= 0V
= -4.5V,
= -10V,
= 0V
= V
= 0V
© Diodes Incorporated
November 2009
GS
GS
= 0V