2N7002E-T1-E3 Vishay, 2N7002E-T1-E3 Datasheet

Page 1

... D High-Speed Circuits D Low Error Voltage Vishay Siliconix I (A) D 0.2 0.115 0.225 0.225 0.5 D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23 Top View Marking Code: 72wll 72 = Part Number Code for 2N7002 ...

Page 2

... VQ1000J/P, BS170 Vishay Siliconix Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous T = 25_C A Continuous Drain Current Continuous Drain Current (T = 150_C 100_C Pulsed Drain Current T = 25_C A Power Dissipation T = 100_C A Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. ...

Page 3

... GS C oss MHz MHz C rss 0 GEN G OFF t = 125 W = 125 0 GEN G OFF Vishay Siliconix Limits 2N7000 2N7002 a Typ Min Max Min Max Unit Limits VQ1000J/P BS170 a Typ Min Max Min Max Unit 2.1 0.8 2.5 0.8 3 "100 "500 nA "10 0 500 ...

Page 4

... VQ1000J/P, BS170 Vishay Siliconix Output Characteristics 1 10 0.8 0.6 0.4 0.2 0 – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.0 0.2 0.4 0.6 I – Drain Current (A) D Gate Charge 0 400 800 1200 Q – Total Gate Charge (pC) g www.vishay.com 11 ...

Page 5

... S-04279—Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 _ = 25_C J 1.0 1.2 1.4 Threshold Voltage 0.50 = 250 0.25 –0.00 –0.25 –0.50 –0.75 –50 – – Square Wave Pulse Duration (sec) 1 Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 500 – Gate-to-Source Voltage (V) GS 100 125 150 Notes: ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...